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AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy
Author(s) -
Ristić J.,
SánchezGarcía M.A.,
Ulloa J.M.,
Calleja E.,
SanchezPáramo J.,
Calleja J.M.,
Jahn U.,
Trampert A.,
Ploog K.H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<717::aid-pssb717>3.0.co;2-8
Subject(s) - molecular beam epitaxy , heterojunction , materials science , optoelectronics , epitaxy , scattering , luminescence , optics , nanotechnology , physics , layer (electronics)
This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III‐element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E 2 phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects.