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Defect Creation under UV Irradiation of CsI:Pb Crystals in Pb 2+ ‐Induced Absorption Bands Investigated by Luminescence Methods
Author(s) -
Babin V.,
Kalder K.,
Krasnikov A.,
Nikl M.,
Nitsch K.,
Zazubovich S.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200211)234:2<689::aid-pssb689>3.0.co;2-f
Subject(s) - luminescence , irradiation , absorption (acoustics) , materials science , optoelectronics , photochemistry , chemistry , physics , composite material , nuclear physics
The creation of defects in CsI:Pb crystals by ultraviolet radiation at 4.2 K has been investigated by thermally stimulated and optically stimulated luminescence methods. The origin of the optically created defects has been established. The dependences of the defect creation efficiency on the irradiation energy and time, on the uniaxial stress, and on the concentration of the impurity (Pb 2+ and Na + ) ions have been found. The charge‐transfer processes taking place under irradiation of CsI:Pb crystals in the Pb 2+ ‐related absorption bands and resulting in the appearance of the self‐trapped and localized exciton luminescence and in defect creation have been explained.