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Hartree and Exchange Effects in the Calculation of Hole Levels in p‐Type Delta‐Doped Diamond Systems
Author(s) -
MoraRamos M.E.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200211)234:2<481::aid-pssb481>3.0.co;2-i
Subject(s) - hartree , doping , effective mass (spring–mass system) , diamond , condensed matter physics , valence (chemistry) , physics , density of states , chemistry , atomic physics , quantum mechanics , organic chemistry
Γ‐point hole states in boron δ‐doped diamond quantum wells are calculated with the use of a local density Thomas–Fermi–Dirac approximation for the potential energy function and the solution of an effective mass equation. The approach includes Hartree and exchange contributions in the hole gas. The calculation assumes a two‐independent (hh + lh) hole band model, and different sets of Luttinger parameters for diamond, reported in the literature, are used. It is shown that the hole spectrum is highly sensitive to the values of the valence effective masses. The results for the hole energy states would help to clarify the actual set of valence band parameters if measurements of optical absorption involving transitions from hole energy states in diamond systems with delta doping are performed.