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Many‐Particle Charging Effects and Recombination Current through a Quantum Dot Array
Author(s) -
Kiesslich G.,
Wacker A.,
Schöll E.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200211)234:1<215::aid-pssb215>3.0.co;2-2
Subject(s) - quantum dot , wetting layer , quantum tunnelling , quantum dot laser , condensed matter physics , physics , current (fluid) , electron , diode , quantum point contact , coulomb , quantum mechanics , quantum well , semiconductor laser theory , laser , thermodynamics
A numerical analysis of the stationary current–voltage characteristic of a p–i–n diode comprising a layer of self‐organized quantum dots is presented. For bias voltages below the flat band condition the current is given by sequential tunneling of holes and electrons in the quantum dots and the wetting layer. Their recombination causes a current through the device which shows well‐pronounced differential conductance oscillations. As a fingerprint of many‐particle charging effects in individual quantum dots we discuss these oscillations in terms of the strength of the Coulomb interaction between carriers in different quantum dots and the influence of the size distribution of the quantum dots.