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Microscopic Description of Exciton‐Polaritons in Thin Semiconductor Layers
Author(s) -
Schumacher S.,
Czycholl G.,
Jahnke F.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200211)234:1<172::aid-pssb172>3.0.co;2-v
Subject(s) - polariton , exciton , semiconductor , physics , microscopic theory , domain (mathematical analysis) , condensed matter physics , boundary value problem , boundary (topology) , quantum mechanics , mathematical analysis , mathematics
Polariton effects in the optical spectra of thin semiconductor samples are analyzed within a microscopic theory based on a direct solution of the Schrödinger equation for the exciton motion in a finite sample. Various numerical schemes for the solution of the Schrödinger equation are discussed. Results are compared with the Pekar model augmented by phenomenologically introduced dead‐layers at the surfaces. While the dead‐layer is an unknown input parameter for macroscopic models based on additional boundary conditions, the microscopic theory can be used to determine the dead‐layer thickness. Results are presented for various material systems. Furthermore the nonlocal excitonic susceptibility calculated within the microscopic theory in the frequency domain is presented.