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Parasitic Hole Channels in AlGaN/GaN Heterojunction Structures
Author(s) -
Jogai B.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200210)233:3<506::aid-pssb506>3.0.co;2-r
Subject(s) - heterojunction , materials science , poisson's equation , density functional theory , electronic band structure , condensed matter physics , piezoelectricity , hamiltonian (control theory) , optoelectronics , physics , chemistry , computational chemistry , quantum mechanics , mathematics , mathematical optimization , composite material
The formation of free holes in multi‐junctioned cation‐faced AlGaN/GaN structures for use as heterojunction field‐effect transistors (HFETs) is investigated theoretically. The model is based on a self‐consistent solution of a multi‐band k · p Hamiltonian, the Poisson, and charge balance equations and includes the electron and hole‐induced exchange‐correlation potentials via density functional theory. The piezoelectric and spontaneous polarizations are taken into account. Realistic surface boundary conditions are incorporated by imposing a sheet layer of surface donors populated according to Fermi–Dirac statistics. For cation‐faced structures, the calculations show that a two‐dimensional hole gas (2DHG) may form at each GaN on AlGaN interface, depending on the structural geometry.