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Electronic Structure of GaAs 1–x N x Alloy by Soft‐X‐Ray Absorption and Emission: Origin of the Reduced Optical Efficiency
Author(s) -
Strocov V.N.,
Nilsson P.O.,
Augustsson A.,
Schmitt T.,
DebowskaNilsson D.,
Claessen R.,
Egorov A.Yu.,
Ustinov V.M.,
Alferov Zh.I.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200209)233:1<r1::aid-pssb99991>3.0.co;2-q
Subject(s) - alloy , absorption (acoustics) , materials science , optoelectronics , metallurgy , composite material
The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%)alloy, in view of applications in optoelectronics, is determined for the firsttime using soft-X-ray absorption (SXA) and emission (SXE). Deviations fromcrystalline GaN, in particular in the conduction band, are dramatic. Employingthe orbital character and elemental specificity of the SXE/SXA spectroscopies,we identify a charge transfer from the N atoms at the valence band maximum,reducing the overlap with the wavefunction in conduction band minimum, as themain factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, ak-conserving process of resonant inelastic x-ray scattering involving the L1derived valence and conduction states is discovered.