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Implications of Imperfect Interfaces and Edges in Ultra‐small MOSFET Characteristics
Author(s) -
Asenov A.,
Kaya S.,
Brown A.R.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200209)233:1<101::aid-pssb101>3.0.co;2-m
Subject(s) - mosfet , scaling , surface finish , materials science , imperfect , surface roughness , enhanced data rates for gsm evolution , statistical physics , formalism (music) , geometry , physics , computer science , mathematics , transistor , voltage , telecommunications , linguistics , philosophy , quantum mechanics , composite material , art , musical , visual arts
We use 3D statistical simulations to analyze the influence of imperfect interfaces and edges in sub‐100 nm MOSFET characteristics. In particular, we focus on the impact of gates deformed by line edge roughness, and of oxide thickness variations resulting from a rough Si/SiO 2 interface. The 3D simulations are based on a very efficient 3D drift‐diffusion framework, which can introduce quantum mechanical corrections via the density gradient formalism. Random features at the gate edges and at the Si/SiO 2 interface have similar statistical descriptions, but use different parameter sets in accordance with measurements. In MOSFETs, both line edge roughness and oxide thickness variations result in intrinsic parameter fluctuations, which are comparable in magnitude to random dopant effects. We simulate the dependence of intrinsic fluctuations on the statistical model parameters of the roughness. We also consider the scaling of devices with rough gate edges and rough SiO 2 interfaces. Our results highlight the importance of including realistic geometry features in the design and analysis of MOSFETs below 50 nm regime.