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Modeling Multi‐Band Effects of Hot Electron Coupled Transport in n‐GaAs
Author(s) -
Diyadi J.,
Amechnoue K.,
Hlou L.,
Moatadid A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200208)232:2<323::aid-pssb323>3.0.co;2-#
Subject(s) - electric field , electron , transient (computer programming) , range (aeronautics) , field (mathematics) , physics , matrix (chemical analysis) , condensed matter physics , computational physics , materials science , mathematics , quantum mechanics , computer science , pure mathematics , composite material , operating system
We use a full band iterative matrix method to study the high‐field transport in n‐type GaAs for the first time using three non‐parabolic valleys (Γ, L, and X). The new simulation of transient electrons in GaAs shows that, even if there exist carriers in the X‐valley beginning from an electric field E = 10 kV/cm, the two‐valley model (Γ and L) remains still valid until E = 20 kV/cm. We present results for the distribution functions, in the transient and permanent regimes in GaAs in the Γ‐, L‐, and X‐valleys, for electric fields in the range 1 to 60 kV/cm. These functions allow to calculate all parameters of the first order in both regimes. We obtain good agreement with the experimental velocity–field curves.