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The Photoionization Cross‐Section of Impurities in Quantum Dots
Author(s) -
Sali A.,
Satori H.,
Fliyou M.,
Loumrhari H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200208)232:2<209::aid-pssb209>3.0.co;2-o
Subject(s) - photoionization , quantum dot , impurity , atomic physics , photon energy , photon , ground state , position (finance) , cross section (physics) , physics , thermal conduction , condensed matter physics , chemistry , ionization , ion , quantum mechanics , finance , economics
In quantum dot structures, photoionization has been considered as an optical transition from the impurity ground state to the conduction subbands. Using a variational approach, we have calculated the photon energy dependence of the photoionization cross‐section for a hydrogenic donor impurity in an infinite barrier GaAs quantum dot as a function of the sizes of the dot and the impurity position. The results we have obtained show that the photoionization cross‐section is strongly affected by the quantum size effects and the position of the impurity and its overall shape seems to be a signature of the quantum dot system.