Premium
Energy of the Two Variants 11A and 11B in Silicon and Germanium by the Semi‐Empirical Tight‐Binding Method
Author(s) -
Chen J.,
Hairie A.,
Paumier E.,
Nouet G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200208)232:2<191::aid-pssb191>3.0.co;2-o
Subject(s) - germanium , silicon , tight binding , materials science , tilt (camera) , binding energy , crystallography , engineering physics , condensed matter physics , atomic physics , optoelectronics , chemistry , electronic structure , physics , mathematics , geometry
A semi‐empirical tight‐binding model was used to study the total energy of Σ = 11 tilt grain boundaries in silicon and germanium. At low temperature the structures A in silicon and B in germanium were found to be more stable in agreement with the experimental results.