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X‐Ray Photoelecton Spectra and Electronic Structure of Bi 2 S 3 Crystals
Author(s) -
Grigas J.,
Talik E.,
Lazausks V.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200208)232:2<189::aid-pssb189>3.0.co;2-x
Subject(s) - semiconductor , valence (chemistry) , x ray photoelectron spectroscopy , spectral line , condensed matter physics , crystal (programming language) , materials science , electronic structure , crystal structure , photoconductivity , ab initio quantum chemistry methods , dielectric , chemistry , crystallography , physics , nuclear magnetic resonance , optoelectronics , molecule , organic chemistry , astronomy , computer science , programming language
In this issue's paper [1] selected as Editor's Choice, experimental results of X‐ray photoelectron spectroscopy of valence band and core levels of Bi 2 S 3 , a highly photoconductive semiconductor material, are compared with the results of theoretical ab initio calculations. These are based on the molecular model of the Bi 2 S 3 crystal, as depicted in the cover picture of this issue. At room temperature, the crystal exhibits weak polarity. Anomalies of various physical properties such as a small charge redistribution and phase transitions are detected in the temperature range 160–460 K. The corresponding author, Jonas Grigas, is professor at the Department of Radiophysics of Vilnius University, where he is working on dielectric and other spectroscopies of ferroelectrics and various related materials.