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Electron Beam Lithography‐Based InGaAs/GaAs Quantum Dot Arrays on (311)A GaAs Surfaces
Author(s) -
Rodrigues S.G.,
Alves M.V.,
GonzálezBorrero P.P.,
Marega E.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<62::aid-pssb62>3.0.co;2-c
Subject(s) - quantum dot , electron beam lithography , molecular beam epitaxy , heterojunction , materials science , optoelectronics , nanolithography , photoluminescence , lithography , quantum well , gallium arsenide , epitaxy , optics , nanotechnology , resist , physics , fabrication , laser , medicine , alternative medicine , layer (electronics) , pathology
The development of techniques of nanofabrication is presented, using electron beam lithography, applied to semiconductor heterostructures grown by molecular beam epitaxy on non‐(100) substrates. The structures studied were fabricated on InGaAs/GaAs single quantum wells, with 15% In concentration and a well width of 4 nm. The arrays of quantum dots were studied by photoluminescence spectroscopy. The optical emission spectra were analyzed with regard to the dot parameters, power density and temperature.