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Microstructure and Photoluminescence of CdS‐Doped Silica Films Grown by RF Magnetron Sputtering
Author(s) -
Rolo A.G.,
Stepikhova M.V.,
Filonovich S.A.,
Ricolleau C.,
Vasilevskiy M.I.,
Gomes M.J.M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<44::aid-pssb44>3.0.co;2-4
Subject(s) - photoluminescence , materials science , annealing (glass) , analytical chemistry (journal) , doping , microstructure , semiconductor , band gap , sputter deposition , high resolution transmission electron microscopy , absorption edge , transmission electron microscopy , sputtering , optoelectronics , thin film , nanotechnology , chemistry , composite material , chromatography
Silica films containing CdS nanometer‐sized particles with semiconductor contents of 1–10% were produced by radio‐frequency magnetron sputtering at room temperature with subsequent annealing. The mean diameter of the CdS nanocrystals (NCs) varied between 4 and 6 nm, with narrow size distribution. High‐resolution transmission electron microscopy images obtained for low‐semiconductor‐fraction samples showed quite a homogeneous NC distribution inside the silica matrix, while the high‐concentration samples showed an agglomeration of NCs in a columnar structure. The observed photoluminescence (PL) bands were correlated with the semiconductor concentration. Two intense PL bands, one near the band‐gap energy and the other in the red, were observed at low temperature for samples with low CdS fraction. The high‐energy band was found to be Stokes shifted by some 200 meV with respect to the absorption edge at room temperature. The samples with high CdS fraction only displayed a broad red emission band, which was attributed to interface states.