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Hole States in p‐Type Delta‐Doped ZnSe Quantum Wells
Author(s) -
GaggeroSager L.M.,
MoraRamos M.E.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<169::aid-pssb169>3.0.co;2-6
Subject(s) - valence (chemistry) , photoluminescence , quantum well , condensed matter physics , doping , delta , valence band , atomic physics , physics , chemistry , band gap , quantum mechanics , optoelectronics , laser , astronomy
Abstract The study of valence band states in single p‐type delta‐doped quantum wells in ZnSe is performed using the Thomas–Fermi–Dirac approximation as framework for presenting an analytical expression for the Hartree–Fock potential. The results for the interband transition obtained in the calculation are compared with experimental values of photoluminescence showing E c ‐ E v energy differences. In spite of the very scarce experimental information about these kinds of systems, it is possible to predict a very good agreement when this exchange‐including simple model is applied.