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A Variational Approach for the Calculation of Single Electron States in Semiconductor Heterostructures
Author(s) -
MoraRamos M.E.,
ToledoSolano M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<142::aid-pssb142>3.0.co;2-5
Subject(s) - heterojunction , fermi gas , semiconductor , condensed matter physics , electron , conduction band , electronic band structure , fermi level , function (biology) , fermi energy , physics , energy (signal processing) , quantum mechanics , evolutionary biology , biology
A different variational scheme for the calculation of conduction band energy levels is proposed for the study of single electron states in the quasi‐two‐dimensional gas of semiconducting heterostructures. The method uses a trial potential energy function which essentially results from the local density Thomas–Fermi theory of a two‐dimensional gas of interacting electrons. The model potential is then written as a combination of this Hartree contribution plus a typical triangular quantum well. The calculation of the lower electronic states in a AlN/GaN single heterostructure is presented as an application.