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The Influence of Many‐Body and Bandstructure Effects in the Design of High Power Diode Lasers
Author(s) -
Pereira M.F.,
Wenzel H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<134::aid-pssb134>3.0.co;2-1
Subject(s) - quantum well , distributed bragg reflector , laser , hamiltonian (control theory) , propagator , dielectric , diode , dipole , physics , semiconductor laser theory , optics , optoelectronics , materials science , condensed matter physics , quantum mechanics , mathematics , mathematical optimization
A microscopic many‐body theory is used to compute the dielectric constant of single quantum wells. The nonparabolic electron and hole subband dispersion relations and dipole transition moments of the free propagators stem from the numerical solutions of an 8 × 8 k · p Hamiltonian. The resulting local optical response and carrier recombination rates are used as input for realistic device simulators. Absorption, gain as well as threshold currents of distributed Bragg reflector lasers are presented.