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Reflectance Measurements of Annealed Porous Silicon Implanted with Nitrogen by Plasma Immersion Ion Implantation
Author(s) -
Beloto A.F.,
Silva M.D.,
Senna J.R.,
Kuranaga C.,
Leite N.F.,
Ueda M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200207)232:1<111::aid-pssb111>3.0.co;2-l
Subject(s) - materials science , silicon , plasma immersion ion implantation , porous silicon , wafer , annealing (glass) , ion implantation , monocrystalline silicon , photoluminescence , analytical chemistry (journal) , ultraviolet , nitrogen , ion , optoelectronics , chemistry , metallurgy , organic chemistry , chromatography
Porous silicon (PS) samples, approximately 1 μm thick, were obtained from p‐ and n‐type (100) monocrystalline silicon wafers using different anodization conditions and were implanted with nitrogen by plasma immersion ion implantation (PIII). For comparison, polished silicon samples were implanted as well as the PS samples. The effects of implantation and of the compounds formed (SiO 2 and Si 3 N 4 ) on the reflectance were analyzed. Reflectance measurements of the implanted samples were carried out before and after PIII, and after annealing (1000 °C, 30 min in N 2 ) and etching in an 8% (w/w) HF solution for 8 min. After implantation, a reduction of the reflectance in the ultraviolet (UV) region of the spectrum was observed for the polished silicon samples. All the PS samples had strong photoluminescence (PL) before and after PIII and small changes were observed in the reflectance. After annealing, the PS samples showed an increase of the reflectance in the UV region and no PL.