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Spin‐Dependent Transport in Heavily Mn‐Doped GaAs II: Effect of Collisional Broadening
Author(s) -
Kuivalainen P.,
Lebedeva N.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200206)231:2<512::aid-pssb512>3.0.co;2-2
Subject(s) - condensed matter physics , spin (aerodynamics) , electrical resistivity and conductivity , doping , curie temperature , scattering , impurity , ion , ferromagnetism , semiconductor , charge carrier , magnetic semiconductor , carrier scattering , chemistry , materials science , physics , optoelectronics , optics , organic chemistry , quantum mechanics , thermodynamics
We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions. By using Zubarev's double‐time Green's functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian‐type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional δ‐function‐type spectral function. This improves the fit of the calculated results to the experimental resistivity data in Ga 0.947 Mn 0.053 As.