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GaAs/AlAs Superlattices and the Tight‐Binding Model
Author(s) -
Helmholz D.,
Lew Yan Voon L.C.,
Ge W.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200206)231:2<457::aid-pssb457>3.0.co;2-7
Subject(s) - superlattice , tight binding , observable , condensed matter physics , band gap , wave function , physics , function (biology) , materials science , electronic structure , quantum mechanics , biology , evolutionary biology
A study of how well tight‐binding models can reproduce the optoelectronic properties of GaAs/AlAs superlattices is carried out. It is shown that two key parameter sets lead to observable differences in the pseudo‐direct energy gap regime, as well as in the direct gap regime. In addition to the differences in bulk fitting, other less direct differences, such as wave function localization, are found to play a role.