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Study of Short‐Range Ordering in SnTe〈In〉 Semiconductor Solid Solutions by 119 Sn Mössbauer Spectroscopy
Author(s) -
Baltrunas D.,
Dragunas A.,
Rogacheva E.,
Gorne G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200205)231:1<231::aid-pssb231>3.0.co;2-c
Subject(s) - stoichiometry , impurity , mössbauer spectroscopy , indium , materials science , semiconductor , inflection point , analytical chemistry (journal) , maxima , spectroscopy , solid solution , atmospheric temperature range , condensed matter physics , chemistry , crystallography , thermodynamics , metallurgy , optoelectronics , quantum mechanics , physics , art , geometry , mathematics , organic chemistry , chromatography , performance art , art history
The dependences of the isomer shift δ and the resonant absorption peak area S on the Te content (49.9–51.4 at%) in the SnTe〈In〉 semiconductor alloys at the fixed indium concentration (3 at%) were investigated at 300 K using the Mössbauer spectroscopy. Maxima of S and inflection points in the δ curves were detected at the Te concentrations corresponding to the condition C In / C v = 2, where C In and C v are the atomic concentrations of In and non‐stoichiometric vacancies, respectively. The observed non‐monotonous character of the δ and S dependences on the degree of deviation from stoichiometry was attributed to the processes of recharging In impurity atoms (In 1+ → In 3+ ) by introducing non‐stoichiometric vacancies and formation of molecular complexes as a result of interactions between intrinsic defects and impurity atoms.