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Biexciton Binding Energy in ZnSe Quantum Wells and Quantum Wires
Author(s) -
Wagner H.P.,
Tranitz H.P.,
Langbein W.,
Hvam J.M.,
Bacher G.,
Forchel A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200205)231:1<11::aid-pssb11>3.0.co;2-v
Subject(s) - biexciton , quantum well , binding energy , wave function , physics , quantum wire , quantum , quantum point contact , condensed matter physics , quantum dot , exciton , quantum mechanics , laser
The biexciton binding energy E XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four‐wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low‐dimensional systems is used to explain the experimentally observed dependence of the biexciton binding energies.