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Differential Capacitance for the AlN/GaN Heterostructure Field Effect Transistors
Author(s) -
MartínezOrozco J.C.,
GaggeroSager L.M.,
MoraRamos M.E.,
PérezQuintana I.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200204)230:2<335::aid-pssb335>3.0.co;2-u
Subject(s) - heterojunction , materials science , capacitance , optoelectronics , transistor , field effect transistor , condensed matter physics , polarization (electrochemistry) , nitride , semiconductor , nanotechnology , chemistry , voltage , physics , quantum mechanics , electrode , layer (electronics)
The differential capacitance in single heterostructure Al x Ga 1— x N/GaN field effect transistors is calculated. It is shown that the existence of a non‐homogeneously distributed density of fixed charges, like the polarization‐induced one ( σ ) at the interface, explains the deviation of the measured C —2 — V characterization from the linear behavior in AlN/GaN metal–insulator semiconductor structures. The results suggest the possibility of using the C — V experiment to measure the value of σ in nitride single heterostructures as well as to determine the degree of strain relaxation in such systems.