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Fermi‐Liquid Behaviour near the Crossover from ‘Metal’ to ‘Insulator’ in 2D Systems
Author(s) -
Savchenko A.K.,
Proskuryakov Y.Y.,
Safonov S.S.,
Roshko S.H.,
Pepper M.,
Simmons M.Y.,
Ritchie D.A.,
Pogosov A.G.,
Kvon Z.D.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200203)230:1<89::aid-pssb89>3.0.co;2-9
Subject(s) - condensed matter physics , crossover , magnetoresistance , fermi liquid theory , vicinal , heterojunction , fermi gas , impurity , scattering , materials science , metal , electron , physics , magnetic field , superconductivity , optics , quantum mechanics , artificial intelligence , computer science , metallurgy
We study the crossover from ‘metallic’ to ‘insulating’ behaviour of the 2DEG in a vicinal Si MOSFET and 2DHG in a GaAs/GaAlAs heterostructure. It is shown that the crossover complies with a conventional Fermi‐liquid approach. In the electron gas, it is caused by an impurity band at the Si/Si oxide interface. In the hole gas, the negative magnetoresistance near the crossover is well described by weak localisation, in spite of large values of interaction parameter r s ∼ 30. We also study ρ ( T ) and parallel magnetoresistance in the ‘metallic’ regime. It is shown that this regime is caused by phonon‐scattering and hole–hole interaction correction in a disordered Fermi liquid.