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Weak Localization and Weak Anti‐Localization in Polycrystalline In 2 O 3—x Thin Films Grown by Sputtering Method
Author(s) -
Kobori H.,
Kawaguchi M.,
Hatta N.,
Ohyama T.,
Ishida S.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200203)230:1<277::aid-pssb277>3.0.co;2-c
Subject(s) - weak localization , indium , crystallite , sputtering , condensed matter physics , scattering , materials science , thin film , magnetic field , conductance , oxygen , analytical chemistry (journal) , magnetoresistance , chemistry , metallurgy , physics , optics , nanotechnology , organic chemistry , quantum mechanics , chromatography
Weak localization (WL) and weak anti‐localization (WAL) phenomena in polycrystalline In 2 O 3— x thin films grown by sputtering have been studied on the magneto‐conductance (MC) before and after the heat treatment, as functions of the temperature, the magnetic field, the azimuth of magnetic field and the film thickness (10–60 nm). The WL profile in MC undergoes a drastic change by the heat treatment above 350 °C and the WAL phenomena become remarkable with increasing temperature. It has been concluded that the WAL arises from the spin–orbit scattering by the excess indium atoms through the elimination of oxygen atoms from the indium oxide by the heat treatment.