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Anomalous Positive Microwave Magnetoresistance of Compensated Ge:Ga near the Metal–Insulator Transition
Author(s) -
Veinger A.I.,
Zabrodskii A.G.,
Tisnek T.V.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200203)230:1<107::aid-pssb107>3.0.co;2-7
Subject(s) - condensed matter physics , magnetoresistance , metal–insulator transition , microwave , materials science , temperature coefficient , insulator (electricity) , magnetic field , doping , effective diffusion coefficient , metal , nuclear magnetic resonance , physics , magnetic resonance imaging , optoelectronics , quantum mechanics , medicine , metallurgy , composite material , radiology
The contactless technique of electron spin resonance was used to measure magnetoresistance (MR) phenomena in heavily doped and compensated Ge:Ga both in the insulator and metallic phases near the insulator–metal (IM) transition. The concentration dependency of the temperature power coefficient of the MR allows us to identify the effect origin versus the hole density. They are: the wave function shrinkage by magnetic field at p < 8.7 × 10 16 cm —3 ; the weak localization regime of the quantum correction theory with the temperature depending diffusion coefficient at 8.7 × 10 16 < p < 1.5 × 10 17 cm —3 ; and the same theory with the temperature independent diffusion coefficient at p < 1.5 × 10 17 cm —3 .