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Influence of Sn on Galvanomagnetic Properties of Layered p‐(Bi 1—x Sb x ) 2 Te 3 Semiconductors
Author(s) -
Kulbachinskii V.A.,
Kaminsky A.Yu.,
Kindo K.,
Narumi Y.,
Suga K.,
Kawasaki S.,
Sasaki M.,
Miyajima N.,
Wu G.R.,
Lostak P.,
Hajek P.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200202)229:3<1467::aid-pssb1467>3.0.co;2-t
Subject(s) - condensed matter physics , hall effect , electrical resistivity and conductivity , effective mass (spring–mass system) , semimetal , materials science , acceptor , doping , valence (chemistry) , chemistry , band gap , physics , organic chemistry , quantum mechanics
The temperature dependence of the resistivity and the Hall effect in the range 0.3–300 K, and the Shubnikov‐de Haas effect have been investigated in Sn‐doped p‐(Bi 1— x Sb x ) 2 Te 3 (0 ≤ x ≤ 1.0) single crystals. Doping of (Bi 1— x Sb x ) 2 Te 3 with tin showed that Sn exhibits acceptor properties in all crystals. The anomalous temperature and magnetic field behavior of the Hall coefficient was explained quantitatively by a model, which involves the complicated two‐valence band structure of p‐(Bi 1— x Sb x ) 2 Te 3 . The quantization of the Hall resistivity ϱ H in the form of plateaus in the dependence of ϱ H on the magnetic field B is observed. The minima of the transverse magnetoresistivity ϱ correspond to the start of plateaus. The oscillation of ϱ H is due to the presence of a carrier reservoir. An impurity resonant band with a high density of states in Sb 2 Te 3 or the second lower valence band with a higher hole effective mass in (Bi 1— x Sb x ) 2 Te 3 serves as the reservoir. The valence band structure of (Bi 1— x Sb x ) 2 Te 3 is also discussed.