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Optical Properties of InGaN Epitaxial Layers Studied Using a Disordered Quantum‐Wire Model
Author(s) -
Zheng R.S.,
Taguchi T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200202)229:3<1313::aid-pssb1313>3.0.co;2-w
Subject(s) - epitaxy , materials science , photoluminescence , condensed matter physics , quantum wire , relaxation (psychology) , quantum well , quantum , nanowire , optoelectronics , nanotechnology , optics , physics , quantum mechanics , layer (electronics) , psychology , social psychology , laser
We present a theoretical study on the optical properties of InGaN epitaxial layers based on a disordered quantum‐wire model. By taking the disorder effect and the carrier relaxation into consideration, we calculate the absorption and time‐dependent photoluminescence spectra of InN nanowires in GaN matrix. The theoretical results reveal that the main features of thick InGaN epilayers that are grown under constant growth conditions may be explained qualitatively by the theory of disordered quantum wires.