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ZnTe‐Based Light‐Emitting‐Diodes Grown on ZnTe Substrates by Molecular Beam Epitaxy
Author(s) -
Chang J.H.,
Takai T.,
Godo K.,
Song J.S.,
Koo B.H.,
Hanada T.,
Yao T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<995::aid-pssb995>3.0.co;2-g
Subject(s) - materials science , optoelectronics , electroluminescence , doping , epitaxy , molecular beam epitaxy , light emitting diode , diode , ambipolar diffusion , conductivity , plasma , nanotechnology , chemistry , layer (electronics) , physics , quantum mechanics
We have investigated the ZnTe‐based material system for the application to light‐emitting devices. To this end, ZnTe homoepitaxy techniques have been developed to grow high‐quality epitaxial layers. The conductivity control of ZnTe and ZnMgSeTe layers have been investigated. High structural quality n‐type ZnTe layers with high carrier concentration are achieved by aluminum doping. Ambipolar conductivity control of quaternary layers is achieved. Aluminum doped ZnMgSeTe layers show a net carrier concentration of 5 × 10 16 cm —3 , while a high hole concentration of 2.5 × 10 19 cm —3 is achieved by p‐type doping using a nitrogen plasma source. Based on those results, Zn 1— x Cd x Te/ZnMgSeTe triple‐quantum‐well(TQW) LED structures were fabricated. Bright electroluminescence was obtained at room temperature at the wavelength of 604 nm from Zn 0.7 Cd 0.3 Te and at 566 nm from Zn 0.85 Cd 0.15 Te TQW‐LED.