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ZnCdTe/ZnTe Light Emitting Diodes with CdSe n‐Type Contact Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy
Author(s) -
Kishino K.,
Nomura I.,
Ochiai Y.,
Che S.B.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<991::aid-pssb991>3.0.co;2-w
Subject(s) - full width at half maximum , ohmic contact , molecular beam epitaxy , materials science , optoelectronics , cladding (metalworking) , diode , light emitting diode , epitaxy , layer (electronics) , doping , active layer , wavelength , nanotechnology , metallurgy , thin film transistor
ZnCdTe/ZnTe pn‐junction LEDs, which consisted of a 10 nm ZnCdTe active layer, and p‐ and n‐type ZnTe cladding layers doped with N and Cl, respectively, were grown on ZnTe substrates by molecular beam epitaxy. The current injection into the ZnCdTe active layer provided yellow emission (587 nm) of a single sharp spectrum at room temperature. The full width at half maximum (FWHM) was 25.9 meV (the corresponding FWHM in wavelength, 7.4 nm). In the devices, n‐type CdSe contact layers were introduced for a low ohmic contact.