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Atomic Layer Growth and Characterization of ZnO Thin Films
Author(s) -
Saito K.,
Yamamoto Y.,
Matsuda A.,
Izumi S.,
Uchino T.,
Ishida K.,
Takahashi K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<925::aid-pssb925>3.0.co;2-7
Subject(s) - diethylzinc , photoluminescence , substrate (aquarium) , limiting , materials science , thin film , atomic layer epitaxy , growth rate , layer (electronics) , atomic layer deposition , enhanced data rates for gsm evolution , analytical chemistry (journal) , crystallography , optoelectronics , nanotechnology , chemistry , geometry , catalysis , mechanical engineering , telecommunications , biochemistry , oceanography , mathematics , chromatography , geology , computer science , engineering , enantioselective synthesis
Atomic layer growth of ZnO thin films was achieved using diethylzinc (DEZ) and H 2 O as reactant gases. Self‐limiting growth occurred at substrate temperatures ranging from 206 to 268 °C. Self‐limiting growth was also achieved for a certain region of the DEZ flow rate. It was found that the crystal growth orientation of the films was strongly dependent on the substrate temperature and the DEZ flow rate. The low temperature photoluminescence spectra exhibit dominant band edge emission at around 3.36 eV.