Premium
p‐Type ZnO Layer Formation by Excimer Laser Doping
Author(s) -
Aoki T.,
Shimizu Y.,
Miyake A.,
Nakamura A.,
Nakanishi Y.,
Hatanaka Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<911::aid-pssb911>3.0.co;2-r
Subject(s) - materials science , excimer laser , ohmic contact , doping , epitaxy , dopant , substrate (aquarium) , layer (electronics) , chemical vapor deposition , electrical resistivity and conductivity , acceptor , optoelectronics , pulsed laser deposition , hall effect , analytical chemistry (journal) , thin film , laser , nanotechnology , chemistry , optics , physics , oceanography , electrical engineering , engineering , condensed matter physics , chromatography , geology
Abstract A p‐type ZnO layer was fabricated by excimer laser doping technique using thermally oxidized ZnO films. Epitaxial ZnO(0001) films were formed by thermal oxidation of epitaxial ZnSe films on Si(111) substrate grown by remote plasma enhanced metal‐organic chemical vapor deposition. The p‐type ZnO was fabricated by excimer laser irradiation with Sb as a dopant source. A good Ohmic contact was obtained between Sb doped ZnO layer and gold metal electrodes. The Sb doped ZnO layer showed positive Hall coefficient, the resistivity was 8 × 10 —3 Ω cm with a hole mobility of 1.5 cm 2 /Vs and an acceptor concentration of 5 × 10 20 cm —3 as p‐type, respectively.