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Heteroepitaxy of ZnO on GaN Templates
Author(s) -
Zeuner A.,
Alves H.,
Hofmann D.M.,
Meyer B.K.,
Hoffmann A.,
Kaczmarczyk G.,
Heuken M.,
Krost A.,
Bläsing J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<907::aid-pssb907>3.0.co;2-7
Subject(s) - photoluminescence , exciton , epitaxy , materials science , laser linewidth , chemical vapor deposition , hexagonal crystal system , crystal (programming language) , template , thin film , single crystal , optoelectronics , crystallography , vapor phase , wide bandgap semiconductor , crystal growth , nanotechnology , chemistry , condensed matter physics , optics , physics , laser , programming language , layer (electronics) , thermodynamics , computer science
Abstract We report on the growth of ZnO single crystal thin films on GaN templates by vapor phase deposition using Zn and NO 2 as precursors. The X‐ray diffractogram showed the hexagonal crystal structure, and the half width of the rocking curve was 4 arcmin. The optical properties are investigated by temperature dependent photoluminescence. A series of neutral donor and acceptor bound exciton recombinations can be resolved at low temperatures with a linewidth as narrow as 0.7 meV. Free exciton emission is already dominating at 45 K proving the high quality of the epitaxial films.