Premium
Microscopic Analysis of High Quality Thick ZnO CVD Layers: Imaging of Growth Domains, Strain Relaxation, and Impurity Incorporation
Author(s) -
Riemann T.,
Christen J.,
Kaczmarczyk G.,
Kaschner A.,
Hoffmann A.,
Zeuner A.,
Hofmann D.,
Meyer B.K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<891::aid-pssb891>3.0.co;2-#
Subject(s) - impurity , materials science , strain (injury) , relaxation (psychology) , stress relaxation , quality (philosophy) , composite material , chemistry , anatomy , physics , medicine , organic chemistry , creep , quantum mechanics
We report on spatially‐resolved low‐temperature luminescence and Raman experiments on ZnO epilayers grown on GaN templates by vapor phase deposition. Our investigations reveal that the peak luminescence position of the free and bound exciton lines of ZnO depends on the distance from the substrate. Different acceptor and donor species become locally dominant. Furthermore, a strong red shift occurs directly at the interface, indicating strong local internal electric fields. From Raman experiments we determined the spatial evolution of the compressive strain in the ZnO epilayer and the induced tensile strain in the GaN templates.