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Dynamics of Photoexcited High Density Carriers in ZnO Epitaxial Thin Films
Author(s) -
Takeda J.,
Jinnouchi H.,
Kurita S.,
Chen Y.F.,
Yao T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<877::aid-pssb877>3.0.co;2-k
Subject(s) - femtosecond , carrier scattering , luminescence , relaxation (psychology) , materials science , thin film , excitation , epitaxy , exciton , condensed matter physics , phonon , electron , scattering , band gap , optoelectronics , atomic physics , laser , optics , physics , nanotechnology , psychology , social psychology , layer (electronics) , quantum mechanics
Time‐resolved luminescence spectra of ZnO epitaxial thin films were measured by the optical Kerr gate method in femtosecond time regime under resonant excitation of the excitonic state. We observed the relaxation of hot carriers until the buildup of luminescence due to an electron–hole plasma (EHP) state and recovery of the renormalized bandgap due to radiative recombination of electrons with holes in the quasi‐thermalized EHP state. The relaxation of hot carriers mainly comes from carrier–carrier collisions but might include in part carrier–LO phonon scattering.