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Bound Biexciton Photoluminescence in ZnO Epitaxial Thin Films
Author(s) -
Yamamoto A.,
Miyajima K.,
Goto T.,
Ko H.J.,
Yao T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<871::aid-pssb871>3.0.co;2-7
Subject(s) - photoluminescence , biexciton , epitaxy , materials science , binding energy , excitation , thin film , exciton , photoluminescence excitation , condensed matter physics , optoelectronics , atomic physics , nanotechnology , physics , quantum mechanics , layer (electronics)
Photoluminescence (PL) due to bound biexcitons (BM bands) was observed in ZnO epitaxial thin films. The PL intensity of the BM bands increased superlinearly with increase in excitation density, whereas the peak energy and spectral shape of the BM bands did not change. These experimental results were consistent with previously reported results for other materials. Furthermore, the binding energies of the bound biexcitons were estimated and compared with those of other materials. Our experimental results suggest that the electron–hole mass ratio of ZnO that has been commonly used is overestimated.