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Observation of Biexciton Emission in ZnO/ZnMgO Multi‐Quantum Wells
Author(s) -
Sun H.D.,
Segawa Y.,
Makino T.,
Chia C.H.,
Kawasaki M.,
Ohtomo A.,
Tamura K.,
Koinuma H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<867::aid-pssb867>3.0.co;2-o
Subject(s) - biexciton , exciton , quantum well , excitation , molecular beam epitaxy , binding energy , scattering , spontaneous emission , condensed matter physics , atomic physics , materials science , physics , epitaxy , laser , optics , nanotechnology , quantum mechanics , layer (electronics)
We report on the experimental observation of the radiative recombination of localized biexcitons at low temperature (5 K) in ZnO/ZnMgO multi‐quantum wells grown by laser‐molecular‐beam epitaxy on a lattice‐matched ScAlMgO 4 substrate (0001). The emission components due to the recombinations of localized excitons and biexcitons and due to the exciton–exciton scattering were verified by examining their relative energy positions and intensity dependence on excitation power density. The excitation threshold for biexciton emission was significantly lower than that for exciton–exciton scattering. The binding energy of biexcitons in multi‐quantum wells is largely enhanced compared with the corresponding value of bulk ZnO.