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Well‐Width Dependence of Radiative and Nonradiative Lifetimes in ZnO‐Based Multiple Quantum Wells
Author(s) -
Chia C.H.,
Makino T.,
Segawa Y.,
Kawasaki M.,
Ohtomo A.,
Tamura K.,
Koinuma H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<863::aid-pssb863>3.0.co;2-3
Subject(s) - photoluminescence , radiative transfer , spontaneous emission , quantum well , exciton , recombination , non radiative recombination , molecular beam epitaxy , quantum efficiency , spectroscopy , atomic physics , thermal , laser , materials science , chemistry , physics , optoelectronics , epitaxy , optics , condensed matter physics , nanotechnology , biochemistry , layer (electronics) , quantum mechanics , meteorology , gene
Time‐resolved photoluminescence spectroscopy (TRPL) has been employed to study a set of ZnO/Zn 1— x Mg x O ( x = 0.12) multiple quantum wells (MQWs) grown by laser molecular beam epitaxy, with well‐width L w , varying from 6.91 to 46.5 Å. We have estimated the L w dependence of radiative and nonradiative recombination lifetimes of excitons at low temperature (5 K). Radiative recombination lifetimes were dramatically increased at narrow L w , and the thermal release effect of excitonic localization is discussed. On the other hand, the nonradiative recombination rates were almost constant over the L w range studied, so we conclude that suppression of quantum efficiency due to carrier leakage can be avoided even at narrow L w .