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C and CH 4 as Transport Agents for the CVT Growth of ZnO Crystals
Author(s) -
Hassani S.,
TromsonCarli A.,
Lusson A.,
Didier G.,
Triboulet R.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<835::aid-pssb835>3.0.co;2-7
Subject(s) - materials science , substrate (aquarium) , electron mobility , semiconductor , optoelectronics , band gap , crystal (programming language) , methane , growth rate , crystal growth , carbon fibers , wide bandgap semiconductor , analytical chemistry (journal) , crystallography , chemistry , composite material , programming language , oceanography , geometry , organic chemistry , mathematics , chromatography , composite number , computer science , geology
ZnO is a wide‐bandgap (3.437 eV at 2 K) semiconductor which has many applications in optoelectronic devices, such as blue and UV light emitters. ZnO bulk can be used as a substrate for the homoepitaxial growth and as alternative substrate for the heteroepitaxial growth of GaN. From thermodynamic and experimental studies, we have demonstrated that carbon and hydrocarbides such as methane act as efficient chemical transport agents of ZnO. We have observed that the transport rate does not roughly depend on the initial amount of carbon, but is approximately proportional to the temperature difference, Δ T , between source and crystal. cm‐sized ZnO crystals have been grown after adjusting the main parameters of growth. The quality of crystals is assessed from structural, chemical and physical characterisation. Electrical measurements performed on our crtystals show carrier concentrations lying around 10 18 cm —3 at 300 K, with resistivities varying from 0.05 Ω cm to 50 Ω cm for a temperature changing from 4.2 K to 300 K. The maximum mobility measured at room temperature was 183 cm 2 /Vs.