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Study on the Structural Transformation Process from ZnS Epitaxial Film Grown on Si Substrate to ZnO Epitaxial Film by Oxidation
Author(s) -
Miyake A.,
Kominami H.,
Aoki T.,
Azuma N.,
Nakanish Y.,
Hatanaka Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<829::aid-pssb829>3.0.co;2-w
Subject(s) - epitaxy , materials science , annealing (glass) , optoelectronics , exciton , thin film , layer (electronics) , substrate (aquarium) , ultraviolet , nanotechnology , metallurgy , condensed matter physics , oceanography , physics , geology
ZnO epitaxial thin film was successfully obtained by oxidation of ZnS epitaxial thin film with the orientation of (0002),[ $ 11{\bar2}0 $ ]ZnO‖(111),[ $ 1{\bar1}0 $ ]Si. The ZnS film was completely oxidized at 800 °C for 1 h in O 2 flow. An interface layer was formed between the ZnO layer and the Si substrate by excess annealing. The ZnO layer showed near ultraviolet emission due to exciton in addition to visible emission, and by annealing for 5 h, strong exciton emission without the visible emission.