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Incorporation of the Donor Indium in Nanocrystalline ZnO
Author(s) -
Agne Th.,
Guan Z.,
Li X.M.,
Wolf H.,
Wichert Th.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<819::aid-pssb819>3.0.co;2-#
Subject(s) - nanocrystalline material , annealing (glass) , indium , oxidizing agent , zinc , materials science , crystal structure , doping , electrochemistry , inorganic chemistry , crystallography , nanotechnology , metallurgy , chemistry , optoelectronics , electrode , organic chemistry
Nanocrystalline zinc oxide (n‐ZnO) doped with 111 In has been prepared by the method of electrochemical deposition under oxidizing conditions (EDOC). After growth, a crystal size of 5 nm was determined. Investigations of the incorporation of 111 In in the host lattice are performed by the method of perturbed γγ‐angular correlation (PAC). After growth, the PAC experiments show that 111 In is incorporated in a not yet identified complex local structure. Subsequent annealing at about 573 K incorporates 111 In on substitutional Zn site in n‐ZnO, which is a prerequisite for the incorporation of In as a shallow donor.