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Growth and Magneto‐Transport of Gate Controlled n‐Type HgTe/Hg 0.3 Cd 0.7 Te Quantum Wells with the Inclusion of Mn
Author(s) -
Becker C.R.,
Gui Y.S.,
Liu J.,
Daumer V.,
Ortner K.,
Hock V.,
PfeufferJeschke A.,
Buhmann H.,
Molenkamp L.W.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<775::aid-pssb775>3.0.co;2-w
Subject(s) - quantum well , condensed matter physics , asymmetry , population , spin (aerodynamics) , materials science , physics , optics , quantum mechanics , laser , demography , sociology , thermodynamics
A series of gate controlled n‐type asymmetrically modulation doped HgTe quantum wells (QWs) with Mn in one of the barriers have been investigated. From a Fourier analysis of the Shubnikov‐de Haas (SdH) oscillations, the population difference of the two spin split H1 subbands has been determined for three QWs with different spacer thicknesses between the quantum well and the Mn ions. This population difference shows a significant enhancement in the QW with a 5 nm spacer compared to the QWs with 10 and 15 nm thick spacers. The latter results agree with the predictions for Rashba spin–orbit splitting, however, we must assume that Mn in the QW with the thin spacer increases the asymmetry of the QW.