Nickel‐Based Diluted Magnetic Semiconductor (Zn, Ni)Te | Zendy

Ando K. | Zendy; Bhattacharjee A.K. | Zendy; Tanoue H. | Zendy; Takamasu T. | Zendy; Imanaka Y. | Zendy; Kido G. | Zendy; Yasuhira T. | Zendy; Matsuda Y.H. | Zendy; Miura N. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Nickel‐Based Diluted Magnetic Semiconductor (Zn, Ni)Te

Author(s) -

Ando K.,

Bhattacharjee A.K.,

Tanoue H.,

Takamasu T.,

Imanaka Y.,

Kido G.,

Yasuhira T.,

Matsuda Y.H.,

Miura N.

Publication year - 2002

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/1521-3951(200201)229:2<733::aid-pssb733>3.0.co;2-j

Subject(s) - nickel , materials science , magnetic semiconductor , semiconductor , metallurgy , zinc , optoelectronics

The ion implantation method was used to synthesize Zn 1— x Ni x Te films. Magnetic circular dichroism and magnetoabsorption spectra were measured in a sample of nominally x = 0.017. They reveal a substantial Zeeman splitting (up to ≈2.3 meV) of the E 0 transition. The temperature and field dependences of the Zeeman splitting are analyzed within a previously developed theoretical model for the hybridization‐induced sp–d interaction, which includes the orbital degrees of freedom. The results indicate the presence of a static Jahn‐Teller distortion and suggest a valence band sp–d exchange parameter value ≈—1 eV.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research