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Growth of Polycrystalline Cd 0.8 Zn 0.2 Te Thick Films for X‐Ray Detectors
Author(s) -
Kwon J.S.,
Shin D.Y.,
Choi I.S.,
Kim H.S.,
Kim K.H.,
Kim S.U.,
Park M.J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1097::aid-pssb1097>3.0.co;2-c
Subject(s) - crystallite , materials science , x ray detector , electrical resistivity and conductivity , single crystal , crystal growth , detector , crystal (programming language) , x ray , analytical chemistry (journal) , optics , optoelectronics , mineralogy , crystallography , metallurgy , chemistry , physics , programming language , chromatography , quantum mechanics , computer science
Cd 1— x Zn x Te is known as promising medical X‐ray detector material but CdZnTe as a single crystal is not available in large sizes. As an alternative to single crystal, CdZnTe thick film was grown by vacuum thermal evaporator to 100 μm thickness. The characteristics of thick films were analyzed by XRD, EDS, SEM and current–voltage measurements. Zn composition is x = 0.2 and resistivity is higher than 109 Ω cm.