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Influence of Valence‐Band Barriers in VLWIR HgCdTe P‐on‐n Heterojunctions on Photodiode Parameters
Author(s) -
Wenus J.,
Rutkowski J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1093::aid-pssb1093>3.0.co;2-#
Subject(s) - heterojunction , photodiode , valence band , optoelectronics , materials science , valence (chemistry) , chemistry , band gap , organic chemistry
The performance of P‐on‐n double‐layer heterojunction HgCdTe photodiodes at 77 K is analyzed. The effect of the heterojunction valence band barrier on quantum efficiency and R 0 A product is elucidated. Influence of background illumination and bias voltage on these parameters is also presented. Experimental results show that the dependence is more critical for high series/contact resistance.