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Blue‐Violet Avalanche‐Photodiode (APD) and its Ionization Coefficients in II–VI Wide Bandgap Compound Grown by Molecular Beam Epitaxy
Author(s) -
Ishikura H.,
Fukunaga Y.,
Kubota T.,
Maeta H.,
Adachi M.,
Abe T.,
Kasada H.,
Ando K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1085::aid-pssb1085>3.0.co;2-q
Subject(s) - avalanche photodiode , molecular beam epitaxy , optoelectronics , impact ionization , band gap , electric field , materials science , diode , ionization , substrate (aquarium) , avalanche diode , semiconductor , epitaxy , optics , chemistry , layer (electronics) , breakdown voltage , physics , nanotechnology , ion , organic chemistry , oceanography , quantum mechanics , detector , geology , voltage
We present II–VI wide bandgap semiconductor ZnSe and ZnSSe based blue‐violet avalanche photo‐diode (APD) operation grown on GaAs substrate by molecular beam epitaxy (MBE). Because of highly improved crystal quality of the active layer, the ZnSSe APD reveals stable and high avalanche gain ( G ≥ 60) in the blue‐violet optical region under high field operation condition ( E = 1.15 × 10 6 V/cm) at room temperature (RT). High electric field induced ionization coefficients α (for electrons) and β (for holes) are determined as a function of electric field strength E (V/cm); α( E ) = 1.7 × 10 7 exp (—4.9 × 10 6 / E ) and β( E ) = 3.7 × 10 6 exp (—4.0 × 10 6 / E ).