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Widegap II–VI Compound Optical Modulators of ZnSe/ZnMgSSe Single and Asymmetric‐Coupled Quantum Wells
Author(s) -
Abe T.,
Yamada Y.,
Itano N.,
Kusuhara T.,
Ohmura Y.,
Kasada H.,
Ando K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1081::aid-pssb1081>3.0.co;2-d
Subject(s) - quantum well , stark effect , molecular beam epitaxy , optical modulator , quantum confined stark effect , wavelength , modulation (music) , optoelectronics , substrate (aquarium) , chemistry , optics , materials science , electric field , epitaxy , physics , nanotechnology , phase modulation , laser , oceanography , layer (electronics) , quantum mechanics , geology , phase noise , acoustics
Abstract We report on widegap II–VI compound optical modulators of ZnSe/ZnMgSSe single and asymmetric coupled quantum wells (ACQWs) for blue‐violet short wavelength region. Effective mass approximated calculations have shown that a ZnSe(10 ML)–ZnMgSSe(9 ML)–ZnSe(7 ML) ACQW exhibits a weak Stark effect region ( E < 40 kV/cm) and a strong Stark effect region ( E > 40 kV/cm). The optical modulators with p–i–n structure, fabricated on GaAs substrate by molecular beam epitaxy(MBE), have shown light modulation at a wavelength of 443 nm under a reverse bias of 36 V at room temperature. A modulation depth of 29% was observed under a field strength of 270 kV/cm with a transmission configuration. The ACQW modulator exhibits an enhanced Stark shift of about 20 meV, which is twice as large as the SQW value, in the low field region of 30–100 kV/cm.