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Mechanism of Slow‐Mode Degradation in II–VI Wide Bandgap Compound Based Blue‐Green Laser Diodes
Author(s) -
Adachi M.,
Yukitake H.,
Watanabe M.,
Koizumi K.,
Lee H.C.,
Abe T.,
Kasada H.,
Ando K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1049::aid-pssb1049>3.0.co;2-a
Subject(s) - diode , materials science , optoelectronics , cladding (metalworking) , degradation (telecommunications) , crystallographic defect , laser , dislocation , band gap , carrier lifetime , laser diode , optics , chemistry , composite material , crystallography , silicon , electronic engineering , physics , engineering
Dislocation‐free blue‐green laser diodes of (ZnCd)Se/(ZnMg)(SSe) show a “slow‐mode” degradation during device operation. This degradation is caused not by generation and propagation of macroscopic defects, but by microscopic‐point defect reaction (marked enhancement in its concentration and resulting migration process) during high‐density carrier‐injection. It is also evidenced experimentally that the direct driving force on the marked defect reaction is derived from minority carrier injection induced e–h non‐radiative recombination process at localized point defect centers in the p‐type cladding layer of the LD devices.