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E‐Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate
Author(s) -
Kozlovsky V.I.,
Korostelin Yu.V.,
Popov Yu.M.,
Skasyrsky Ya.K.,
Sadofyev Yu.G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1033::aid-pssb1033>3.0.co;2-b
Subject(s) - molecular beam epitaxy , optoelectronics , materials science , substrate (aquarium) , laser , wavelength , optics , excited state , excitation wavelength , excitation , epitaxy , physics , atomic physics , nanotechnology , oceanography , layer (electronics) , quantum mechanics , geology
Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic‐gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was studied. An output power of 0.3 W was achieved. The laser wavelength was in 518–536 nm range, being at the short wavelength side of the QW emission line at low excitation level. Such unusual feature was explained by the participation of excited QW levels in the creation of the optical gain.