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ZnSe‐Based Room Temperature Low‐Threshold Electron‐Beam Pumped Semiconductor Laser
Author(s) -
Zverev M.M.,
Sorokin S.V.,
Sedova I.V.,
Peregoudov D.V.,
Ivanov S.V.,
Kopev P.S.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1025::aid-pssb1025>3.0.co;2-1
Subject(s) - semiconductor , cathode ray , materials science , laser , optoelectronics , electron , semiconductor laser theory , optics , atomic physics , physics , nuclear physics
We report on room temperature operation of blue‐green ZnSe‐based electron‐beam pumped semiconductor lasers grown by molecular beam epitaxy. The lowest ever reported values of threshold current density in transverse excitation geometry (3–3.5 A/cm 2 ), which is independent of the electron beam energy in the 15–35 kV range, have been obtained. Possible ways to improve the electron‐beam pumped laser characteristics are discussed.